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High-Performance Low-Power 5:2 Compressor With 30 CNTFETs Using 32 nm Technology


itendra Kumar Saini, Avireni Srinivasulu* and Renu Kumawat   Pages 1 - 6 ( 6 )


Background: The advent of high performance computing (HPC) applications and big data applications has made it imparitive to develop hardware that can match the computing demands. In such high performance systems, the high speed multipliers are the most sought after components. A compressor is an important part of the multiplier; it plays a vital role in the performance of multiplier, also it contributes to the efficiency enhancement of an arithmetic circuit. The 5:2 compressor circuit design proposed here improves overall performance and efficiency of the arithmetic circuits in terms of power consumption, delay and power delay product. The proposed 5:2 compressor circuit was implemented using both CMOS and carbon Nano Tube Field Effect Transistor (CNTFET) technologies and it was observed that the proposed circuit has yielded better results with CNTFETs as compared to MOSFETs.

Methods/Results: The proposed 5:2 compressor circuit was designed with CMOS technology simulated at 45 nm with voltage supply 1.0 V and compared it with the existing 5:2 compressor designes to validate the improvements. Thereafter, the proposed design was implemented with CNTFET technology at 32 nm and simulated with voltage supply 0.6 V. Table 1, shows the comparision results of proposed 5:2 compressor with existing designs implemented using CMOS. The results also compare the proposed design on CMOS and CNTFET technologies for parameters like power, delay, power delay product.

Conclusion: It can be concluded from Table 1 that the proposed 5:2 compressor gives better results as compared to the existing 5:2 compressor designs implemeted using CMOS. The improvement in power, delay and power delay product is approx 30%, 15% and 40% respectively. The proposed circuit of 5:2 compressor is also implemented using CNTFET technology and compared, which further enhances the results by 30% (power consumption and PDP). Hence, the proposed circuit implemented using CNTFET gives substantial improvements over the existing circuits.


Carbon nano tubes, carbon nanotube field effect transistor, CNTFET, CNTs, multi walled nanotube, MWNT, single walled nanotube, SWNT.


Department of Electronics and Communication Engineering, Manipal University, Jaipur, 303007, Rajasthan,, Department of Electronics and Communication Engineering, JECRC University, Jaipur, 303905, Rajasthan, Department of Electronics and Communication Engineering, Manipal University, Jaipur, 303007, Rajasthan

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